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Soft-Impact will participate in 6th International Conference on Nitride Semiconductors (ICNS 6) and Commercial Exhibition, that will take place in Bremen, Germany, August 28 through September 2, see the list of presentations below:

1. Modelling and Experimental Analysis of InGaN MOVPE in the Aixtron AIX 200/4 RF-S horizontal reactor;
2. Analytical model for the quantum-confined Stark effect including electric field screening by non-equilibrium carriers;
3. Current crowding effects on visible and UV LED operation;
4. A surface trap model and its application to analysis of III-nitride HEMT performance;
5. On the impact of gas phase nucleation on the pressure dependence of nitride MOVPE growth in close coupled showerhead and planetary reactors;
6. On the role of hydrogen in GaN MOVPE.

The following presentations were made by Soft-Impact team at the 16th American Conference on Crystal Growth and Epitaxy (ACCGE 16) held jointly with 12th US Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE 12):

1. Deposition behavior of SiGe grown from chloride precursors;
2. 3D Numerical Simulation of Global Heat Transfer During Horizontal Direct Crystallization of Large Sapphire Crystals;
3. Effect of V/III ratio in AlN and AlGaN MOVPE;
4. Numerical Investigation of Crucible Rotation Effect on Crystallization Rate Behavior during Czochralski Growth of Si_1-xGe_x Crystals;
5. 3D unsteady analysis of gas turbulent convection during HPLEC InP growth;
6. Numerical analysis of the crystallization front formation in 300 mm CZ Si crystal growth;
7. Effects of reactor pressure and residence time on GaN MOVPE growth effciency.

SiLENSe 2.0 has been released. New version is capable of simulating heterostructures made not only of group-III nitrides, but also of other wurtzite semiconductors (for example, ZnMgO alloys) including hybrid structures. Advanced numerical algorithms improving convergence of computations and built-in visualization of simulation results are incorporated into the package.
 

New section on crystal growth from the melt has been added to the site. Read about the effect of encapsulant optical properties on the crystallization front shape and other results of modeling of the VCz GaAs growth.
 

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