News Archive

SiLENSe 2.0

May 23, 2005

SiLENSe 2.0 has been released. New version is capable of simulating heterostructures made not only of group-III nitrides, but also of other wurtzite semiconductors (for example, ZnMgO alloys) including hybrid structures. Advanced numerical algorithms improving convergence of computations and built-in visualization of simulation results are incorporated into the package.

Modeling of the VCz GaAs growth

May 20, 2005

New section on crystal growth from the melt has been added to the site. Read about the effect of encapsulant optical properties on the crystallization front shape and other results of modeling of the VCz GaAs growth.

ViR for AlN

ViR for AlN has been released. This specialized software was developed to be used for optimization of AlN growth by PVT.

ViR SiC 4.8

ViR SiC 4.8 has been released. This specialized software to be used for optimization of SiC growth by PVT has been updated.

CGSim 7.0

CGSim 7.0 has been released. Task manager is now available for the creation of a list of computational runs, which are calculated one by one. Clusterization of voids and oxygen precipitates can be computed in the module for CZ Si growth.

ECSCRM 2004

Three poster and one oral presentations will be given by Soft-Impact at 5th European Conference on Silicon Carbide and Related Materials (ECSCRM 2004) held in Bologna, Italy:
1. Detailed Modeling Analysis of PVT Growth of AlN Bulk Crystals (poster)
2. Modeling of Mass Leakage through Porous Crucible in PVT Growth of Bulk SiC Crystals (poster)
3. Threading dislocation evolution in bulk crystals grown by PVT (oral)
4. Two-dimensional Model of the Conjugate Unsteady Heat and Mass Transport in the Isothermal Chemical Vapour Infiltration of 3D-preform by SiC Matrix (poster)

CGSim 6.0

A specialized software package Crystal Growth Simulator has been released. CGSim 6.0 is developed for crystal growers to be used for optimization of conventional Czochralski and LEC crystal growth. The package is now employed by several major producers of Si, Ge, and InP wafers.

IWN 2004

Soft-Impact participated in International Workshop on Nitride Semiconductors held in Pittsburgh, Pennsylvania, July 19th through July 23rd.

ICMOVPE-XII

Soft-Impact participated in the 12th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XII), May 30 through June 4, 2004 at the Westin Maui Hotel, Lahaina, Maui, Hawaii. We presented two joint posters.

SiLENSe

Simulator for Light Emitters based on Nitride Semiconductors—software tool for LED bandgap engineering based on Nitride Semiconductors (SiLENSe), is offered for modeling band diagrams and characteristics of light emitting diodes (LEDs) based on group-III nitrides.

Virtual Reactor (SiC) 4.4 has been released

Detailed description of the Virtual Reactor (SiC) 4.4 capabilities are available for downloading. See also a brief description of the features added.