Sergey Karpov,
    "Strategies for creating efficient, beautiful whites",
    Compound Semiconductor, vol. 21-2 (2015),

Sergey Yu. Karpov, Michael Binder, Bastian Galler and Dario Schiavon,
    "Spectral dependence of light extraction efficiency of high-power III-nitride light-emitting diodes",
    Phys. Status Solidi RRL 9, 312316 (2015) / DOI 10.1002/pssr.201510073

A.S. Segal, S.Yu. Karpov, A.V. Lobanova, E.V. Yakovlev, K. Hara and M. Naito,
    Study of Al Incorporation in Chemical Vapor Deposition of p-Doped SiC",
    Materials Science Forum Vols 821-823 (2015) pp 145-148 /doi:10.4028/www.scientific.net/MSF.821-823.145

W. V. Lundin, D. V. Davydov, E. E. Zavarin, M. G. Popovb, A. V. Sakharov, E. V. Yakovlev, D. S. Bazarevskii, R. A. Talalaev, A. F. Tsatsulnikov, M. N. Mizerov and V. M. Ustinov,
    MOVPE of IIIN LED Structures with Short Technological Process",
    ISSN 10637850, Technical Physics Letters, 2015, Vol. 41, No. 3, pp. 213216

.. , .. , E.E. , .. , .. , .. , .. , .. , .. , .. , .. ,
    - III-N ",
    , 2015, 41, . 5


V.I. Taranyuk, A.V.Gekrin, A.V.Kolesnikov, V.V.Kalaev,
    The heat transfer model for VGF technique with skull layer for halide crystal growth,
    Functional Materials 21, No/1 (2014)

S. Yu. Karpov,
    ABC-Model for Interpretation of Internal Quantum Efficiency and Its Droop in III-Nitride LEDs: A Review,
    Opt. Quantum Electron. (2014) / DOI 10.1007/s11082-014-0042-9

Kirill A. Bulashevich and Sergey Yu. Karpov,
    Assessment of factors limiting conversion efficiency of single-junction III-nitride solar cells,
    Phys. Status Solidi C 11, No. 34, 640643 (2014)

K. A. Bulashevich, A. V. Kulik, and S. Yu. Karpov,
    Optimal ways of color mixing for high-quality white-light LED sources,
    Phys. Status Solidi (a) (2014) / DOI 10.1002/pssa.201431576

I. Titkov, S. Karpov, A. Yadav, V. Zerova, M. Zulonas, B. Galler, M. Strassburg, I. Pietzonka, H-J. Lugauer, E. Rafailov,
    Temperature-Dependent Internal Quantum Efficiency of Blue High-Brightness Light-Emitting Diodes,
    IEEE Journal of Quantum Electronics, vol. 50, issue 11, pp. 911-920

M. Dauelsberg, D. Brien, H. Rauf, F. Reiher, J. Baumgartl, O. Haberlen, A. Segal, A. Lobanova, E. Yakovlev, R. Talalaev,
    On mechanisms governing AlN and AlGaN growth rate and composition in large substrate size planetary MOVPE reactors,
    Journal of Crystal Growth, Vol. 393 (2014) pp.103107


M. V. Durnev and S. Yu. Karpov,
    Polarization phenomena in light emission from C-plane Al(In)GaN heterostructures,
    Phys. Stat. Solidi (b) 250 (2013) 180-186.

E. Chernyakov, K. A. Bulashevich, S. Yu. Karpov, and A. L. Zakgeim,
    Ex-perimental and theoretical study of electrical, thermal, and optical characteristics of InGaN/GaN high-power flip-chip LEDs,
    Phys. Stat. Solidi (a) 210 (2013) 466-469.

O. V. Khokhlev, K. A. Bulashevich, and S. Yu. Karpov,
    Polarization doping for III-nitride optoelectronics,
    accepted to Phys. Stat. Solidi (a) 210 (2013) 1369-1376.

E. V. Yakovlev, A. S. Segal, K. A. Bulashevich, S. Yu. Karpov, and R. A. Talalaev,
    Correlations Between Epitaxy Recipe, Characteristics, and Performance of Nitride Light Emitting Diode Structures,
    Jpn. J. Appl. Phys. 52 (2013) 08JB15.